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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187798-IRFP448
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFP448 CAD Model

Description

The Vishay Siliconix brings to you the IRFP448 MOSFET manufactured by Vishay Siliconix.

  • Channel Type: N-channel
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 11A
  • Maximum On-Resistance: 600mOhm @ 6.6A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 84nC @ 10V gate-source voltage
  • Input Capacitance: 1900pF @ 25V drain-source voltage
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-247-3
  • Application: suitable for use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6274 $65.0960
100+ $1.3350 $133.5000
150+ $1.2936 $194.0400
210+ $1.2522 $262.9620
270+ $1.2095 $326.5650
360+ $1.0853 $390.7080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 31,000 pieces
MOQ: 40 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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