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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 16A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 300mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 150nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2600pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187787-IRFP350
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Commercial
Ultra Librarian 3D Model Ultra Librarian IRFP350 CAD Model

Description

The Vishay Siliconix IRFP350 is a MOSFET transistor with a TO-247-3 package.

  • Package: TO-247-3
  • Vds - Drain-Source Breakdown Voltage: 400V
  • Id - Continuous Drain Current: 16A
  • Rds On (Maximum) @ Id, Vgs: 300mOhm @ 9.6A, 10V
  • Gate charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
  • Application: industrial, power management, and commercial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2160 $50.9680
55+ $1.8182 $100.0010
86+ $1.7614 $151.4804
118+ $1.7046 $201.1428
152+ $1.6478 $250.4656
204+ $1.4773 $301.3692
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 10,000 pieces
MOQ: 23 pcs
Order Increment : 1 piece
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