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IRFIBF20GPBF

Part No IRFIBF20GPBF
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 900V 1.2A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 1.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8Ohm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 759706-IRFIBF20GPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIBF20GPBF CAD Model

Description

The IRFIBF20GPBF is a MOSFET technology component with a TO-220-3 supplier device package. It is manufactured by Vishay Siliconix.

  • Market Status: Limited
  • Power Dissipation: 30W Max
  • Vds - Drain-Source Breakdown Voltage: 900V
  • Id - Continuous Drain Current: 1.2A
  • Rds On (Maximum) @ Id, Vgs: 8Ohm @ 720mA, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0395 $62.3700
140+ $0.8524 $119.3360
210+ $0.8258 $173.4180
290+ $0.7993 $231.7970
375+ $0.7727 $289.7625
500+ $0.6930 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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