IRFD9220PBF Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 560mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 340mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 340pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 714562-IRFD9220PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD9220PBF CAD Model

Description

This electronic component is manufactured by Vishay Siliconix and has a Win Source Part Number of 714562-IRFD9220PBF.

  • Win Source Part Number: 714562-IRFD9220PBF
  • Type: MOSFET transistor
  • Polarity: P-Channel
  • Mounting: Through Hole
  • Manufacturer Pack Quantity: 100
  • MSL Level: 1
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 560mA
  • Rds On (Maximum) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 340pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.7244 $65.1960
220+ $0.5951 $130.9220
340+ $0.5757 $195.7380
465+ $0.5575 $259.2375
600+ $0.5394 $323.6400
805+ $0.4838 $389.4590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,600 pieces
MOQ: 90 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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