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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 600mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 360mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187562-IRFD210
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD210 CAD Model

Description

The IRFD210 is an N-Channel MOSFET from Vishay Siliconix.

  • Channel Type: N-Channel
  • Applications: power supplies, motor control, and lighting
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 600mA
  • Package Type: through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.7728 $59.0912
9+ $12.1213 $109.0917
13+ $11.7425 $152.6525
18+ $11.3637 $204.5466
23+ $10.9849 $252.6527
31+ $9.8485 $305.3035
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,000 pieces
MOQ: 4 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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