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Same model may have multiple batches, images only for reference.
IRFD110 Vishay
Same model may have multiple batches, images only for reference.

IRFD110

Part No IRFD110
Manufacturer Vishay
Catalog FETs - Single
Description 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET | MOSFET N-CH 100V 1A 4-DIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 540mOhm at 600mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.3nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 180pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187558-IRFD110
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD110 CAD Model

Description

The IRFD110 is an N-channel MOSFET manufactured by Vishay Siliconix.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 1A
  • Package: 4-DIP
  • RoHS Compliant: Yes
  • Popularity: medium popularity
  • Maximum Power Dissipation: 1.3W
  • Gate-Source Voltage: ±20V

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