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Same model may have multiple batches, images only for reference.
IRFBC30S Real Image
Same model may have multiple batches, images only for reference.

IRFBC30S

Part No IRFBC30S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) | MOSFET N-CH 600V 3.6A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187533-IRFBC30S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30S CAD Model

Description

The Vishay Siliconix IRFBC30S is a medium popularity electronic component manufactured by Vishay Siliconix.

  • Type: MOSFET
  • Transistor Polarity: N-Channel
  • Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature: -55°C to 150°C
  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 3.6A

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