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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 4.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 2.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 610pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187399-IRF830S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF830S CAD Model

Description

The Vishay Siliconix IRF830S is an N-channel MOSFET transistor designed to meet the needs of various electronic circuits. The IRF830S is manufactured by Vishay Siliconix. The supply and demand status is limited, and it is manufactured by Vishay Siliconix. The transistor is designed to operate in a temperature range of -55°C to 150°C. It has a maximum power dissipation of 3.1W and 74W. The transistor is packaged in TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. The transistor is suitable for use in various electronic circuits that require high voltage and current.

  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 3.1W and 74W
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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