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IRFBC30ASTRL

Part No IRFBC30ASTRL
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 600V 3.6A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 510pF at 25V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187530-IRFBC30ASTRL
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30ASTRL CAD Model

Description

The IRFBC30ASTRL is a N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 3.6A.

  • Rds On: 2.2Ohm @ 2.2A
  • Gate-Source Voltage(th): 4.5V @ 250μA
  • Gate Charge (Qg): 23nC @ 10V
  • Input Capacitance (Ciss): 510pF @ 25V
  • Mounting: Surface Mounted
  • Power Dissipation: 74W
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7720 $52.8080
33+ $3.0950 $102.1350
51+ $2.9983 $152.9133
69+ $2.9015 $200.2035
90+ $2.8048 $252.4320
120+ $2.5147 $301.7640
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Availability: 10,400 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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