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IRFBA22N50APBF

Name: IRFBA22N50APBF
Brand: Vishay
SKU: 604832
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFBA22N50APBF
Manufacturer	Vishay
Catalog	FETs - Single
Description	HEXFET®Power MOSFET \| MOSFET N-CH 500V 24A SUPER-220
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	24A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	230mOhm at 13.8A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	115nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	3400pF at 25V
Power Dissipation (Maximum)	340W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	SUPER-220 (TO-273AA)
Manufacturer Package	Super-220
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1187520-IRFBA22N50APBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFBA22N50APBF CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay Siliconix. Its Win Source Part Number is 1187520-IRFBA22N50APBF and it comes in a tube packaging with through hole mounting style.

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187520-IRFBA22N50APBF
Packaging: tube
Mounting Style: through hole
Supply and Demand Status: limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 24A
Rds On (Maximum) @ Id, Vgs: 230mOhm @ 13.8A, 10V
Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) @ Vds: 3400pF @ 25V

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