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IRF730S

Part No IRF730S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 400V 5.5A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187200-IRF730S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF730S CAD Model

Description

The Vishay Siliconix IRF730S is a high-voltage N-channel MOSFET designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 5.5A
  • On-Resistance: 1Ω @ 10V and 3.3A
  • Package: D2PAK
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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