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AP75T10BGP

Part No AP75T10BGP
Manufacturer VBsemi
Catalog OEM Parts (A - B)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1045465-AP75T10BGP
Categories OEM Parts(A-B)
Manufacturer VBsemi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian AP75T10BGP CAD Model

Description

The AP75T10BGP is an N-channel enhancement mode power MOSFET manufactured by VBsemi. It is designed for high-efficiency switching applications, offering a balance of low on-resistance and fast switching speed. This MOSFET is commonly used in applications such as power supplies, motor control, and DC-DC converters.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Features

  • Low On-Resistance: Minimizes conduction losses, increasing overall efficiency.
  • Fast Switching Speed: Reduces switching losses and improves high-frequency performance.
  • Avalanche Energy Tested: Ensures robustness under inductive load switching.
  • 100% UIS Tested: Guarantees reliability under Unclamped Inductive Switching conditions.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with regulations.
  • TO-220 Package: Through-hole package providing good thermal dissipation.

Benefits

  • High Efficiency: Low on-resistance and fast switching contribute to high efficiency in power conversion.
  • Improved Thermal Performance: The TO-220 package facilitates efficient heat dissipation, allowing for higher power operation.
  • Enhanced Reliability: Robust design and testing ensure reliable performance in demanding applications.
  • Simplified Circuit Design: Easy to integrate into various power electronic circuits due to the standard TO-220 package.
  • Reduced Power Loss: Minimizes heat generation, leading to lower operating temperatures and longer component life.

Additional Details

The AP75T10BGP features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 75A. It also has a gate-source voltage (VGS) of ±20V. The TO-220 package provides excellent thermal performance, enabling efficient heat dissipation. This MOSFET is suitable for a wide range of power electronic applications that require high efficiency and reliability.

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