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UT9564L-TN3-R

Part No UT9564L-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278622-UT9564L-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UT9564L-TN3-R CAD Model

Description

The UT9564L-TN3-R is a P-channel Power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for high-efficiency power switching applications. This MOSFET features low on-resistance (RDS(on)) which reduces power loss during switching, making it ideal for DC-DC converters and load switching.

Applications:

  • DC-DC Converters: Efficiently converts DC voltage levels in various electronic devices.
  • Load Switching: Controls power distribution to different parts of a circuit.
  • Power Management Circuits: Optimizes power usage in battery-powered and other energy-sensitive applications.
  • Solid-State Relays: Provides reliable switching without mechanical components.
  • Motor Control: Used in low-power motor control applications.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation.
  • High Switching Speed: Enables efficient operation in high-frequency applications.
  • Low Gate Charge (Qg): Reduces driving power requirements.
  • Avalanche Rated: Provides robustness against voltage transients.
  • P-Channel Configuration: Simplifies drive circuitry in certain applications.

Benefits:

  • Increased Efficiency: Reduces power consumption and heat dissipation.
  • Improved Thermal Performance: Low RDS(on) minimizes heat generated, leading to better reliability.
  • Simplified Circuit Design: P-channel configuration can simplify gate drive requirements in specific circuits.
  • Enhanced Reliability: Avalanche rating provides robustness against voltage spikes.

Technical Specifications:

The UT9564L-TN3-R typically has a low RDS(on) value, allowing for highly efficient power conversion. Its gate charge is also minimized to reduce switching losses. The device features an avalanche rating to improve the robustness of the design. The device comes in a TO-252 package. The specific voltage and current ratings depend on the datasheet, which should be consulted for precise values for design calculations. The maximum gate-source voltage (VGS) and drain-source voltage (VDS) are crucial parameters to consider in application design.

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