The 4N65L-TM3-T is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for power switching applications requiring efficient and reliable performance. This MOSFET features a low gate charge and low on-resistance, contributing to improved power efficiency.

Applications

• Switch mode power supplies (SMPS)
• Adapters and chargers
• Electronic ballasts for lighting
• DC-DC converters
• Power factor correction (PFC) circuits
• Motor control

Features

• High voltage capability (650V)
• Low on-resistance (RDS(on)) for reduced power loss
• Low gate charge (Qg) for fast switching
• Avalanche ruggedness for enhanced reliability
• Fast switching speed
• Lead-free package

Benefits

• Efficient power conversion due to low on-resistance
• Reduced switching losses due to low gate charge
• Enhanced system reliability due to avalanche ruggedness
• Suitable for high-frequency switching applications
• Meets environmental regulations due to lead-free construction
• Improved thermal performance

Specifications

The 4N65L-TM3-T has a drain-source voltage (VDS) rating of 650V and a continuous drain current (ID) rating that varies depending on the case temperature (consult the datasheet for specific values). The on-resistance (RDS(on)) is typically less than 3 Ohms at a specified gate-source voltage. The gate charge (Qg) is low, typically in the nC range. It comes in a TO-220 or similar through-hole package for effective heat dissipation. Detailed electrical characteristics, thermal resistance, and safe operating area information can be found in the official UTC datasheet.