The 2SB649AL-C-T60-K is a PNP epitaxial silicon transistor manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for use in various amplifier and switching applications requiring moderate power dissipation.

Applications

• Audio amplifiers
• Switching regulators
• DC-DC converters
• Power management circuits
• General purpose amplification
• Linear regulator circuits

Features

• PNP transistor
• Epitaxial silicon construction
• Low saturation voltage
• High current capability
• High breakdown voltage
• TO-92 package
• RoHS compliant

Benefits

• Efficient amplification due to low saturation voltage
• Ability to handle moderate power levels
• Reliable performance in various circuit designs
• Easy to integrate into existing designs due to standard package
• Environmentally friendly due to RoHS compliance

Specifications

The 2SB649AL-C-T60-K has a collector-emitter voltage (VCEO) rating, typically around -50V. The collector current (IC) rating is in the range of -1A. The power dissipation (PD) rating is typically around 0.75W. The DC current gain (hFE) is specified within a defined range, indicating its amplification capability. The operating junction temperature range is typically between -55°C and +150°C. The storage temperature range is also between -55°C and +150°C. It comes in a standard TO-92 package, a common and easily mountable package for through-hole components.