The 2N90L-TF3-T is an N-channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for high-efficiency switching applications and is characterized by its low gate charge and on-resistance, leading to minimized power losses and improved thermal performance.

Applications

• DC-DC converters
• Power management systems
• Motor control applications
• Load switches

Features

• Low gate charge
• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness
• RoHS compliant

Benefits

• Improved energy efficiency due to reduced switching and conduction losses
• Lower operating temperatures, enhancing system reliability
• Simplified thermal design due to low RDS(on)
• Higher power density in application circuits

Technical Specifications

The 2N90L-TF3-T is rated for a drain-source voltage (VDS) of 90V and a continuous drain current (ID) which varies with temperature and mounting but is typically around 10A. The gate-source voltage (VGS) is rated at +/-20V. The RDS(on) is typically around 90 mOhms at a VGS of 10V. It is typically packaged in a SOT-223 package.

This MOSFET is suitable for various efficient power switching applications, minimizing power losses and providing reliable performance.