The 15N20L-TN3-T is an N-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for efficient power switching applications, offering a balance of low on-resistance and fast switching speeds.

Applications:

• DC-DC Converters
• Power Inverters
• Motor Drives
• Uninterruptible Power Supplies (UPS)
• Switching Power Supplies

Features:

• Low Gate Charge
• Low Drain-Source On-Resistance (RDS(on))
• Fast Switching Speed
• High Avalanche Capability
• RoHS Compliant

Benefits:

• Improved Power Efficiency: The low RDS(on) minimizes conduction losses, leading to higher overall efficiency.
• Reduced Switching Losses: Fast switching characteristics minimize switching losses, contributing to improved efficiency and thermal performance.
• Enhanced Thermal Performance: The package design and low RDS(on) allow for efficient heat dissipation.
• Simplified Gate Drive: Low gate charge simplifies gate drive requirements, reducing the complexity and cost of the driver circuit.
• Increased Reliability: High avalanche capability provides added protection against voltage transients, increasing system reliability.

Detailed Specifications:

The 15N20L-TN3-T features a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 15A. The gate-source voltage (VGS) is ±30V. The RDS(on) is typically 0.18 Ohms at VGS = 10V. The total gate charge (Qg) is typically 18 nC. The device is available in a TO-252 package, facilitating surface mounting. This MOSFET is suitable for applications requiring high voltage and moderate current handling capabilities.

In summary, the 15N20L-TN3-T is a robust and efficient power MOSFET suitable for a wide range of switching applications. Its combination of low on-resistance, fast switching speed, and high avalanche capability ensures reliable performance in demanding environments.