The TSF18N50MR is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Truesemi. It is designed for high-voltage, high-power switching applications. The device features a fast switching speed and low on-resistance, contributing to efficient power conversion. It is commonly used in power supplies, motor control, and other power electronics applications.

Applications

• Switch-mode power supplies (SMPS)
• Motor control
• DC-DC converters
• Uninterruptible power supplies (UPS)
• Inverters
• Lighting ballast

Features

• N-channel MOSFET
• High voltage: 500V
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche energy
• RoHS compliant

Benefits

• Efficient power conversion
• Reduced power losses
• Reliable operation at high voltages
• Simplified circuit design
• Improved system efficiency

Technical Specifications

The TSF18N50MR is an N-channel MOSFET with a drain-source voltage (VDS) rating of 500V. The gate-source voltage (VGS) is typically ±30V. The continuous drain current (ID) is specified in the datasheet and depends on the operating temperature and heatsinking conditions. The on-resistance (RDS(on)) is low to minimize conduction losses. Refer to the datasheet for precise values, thermal resistance, and package information.