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TGF2023-2-02

Part No TGF2023-2-02
Manufacturer TriQuint Semiconductor
Catalog Electronic Wholesale
Description 12 Watt Discrete Power GaN on SiC HEMT
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Manufacturer TriQuint Semiconductor
Win Source Part Number 1266925-TGF2023-2-02
Manufacturer Homepage www.triquint.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TGF2023-2-02 CAD Model

Description

The TGF2023-2-02 is a high-performance gallium nitride (GaN) power amplifier manufactured by TriQuint Semiconductor (now Qorvo). It is designed for a wide range of applications including radar, communications, and test instrumentation in the S-band frequency range. The amplifier offers high power, high gain, and excellent efficiency, making it suitable for demanding applications.

Applications:

  • Radar systems: Used in pulsed radar applications for high-power transmission.
  • Communication systems: Employed in base stations and satellite communications for signal amplification.
  • Test and measurement equipment: Used in signal generators and power amplifiers for accurate signal generation.
  • Electronic warfare: Utilized in jamming and countermeasures systems.

Features:

  • Frequency range: Operates from 2.0 to 2.7 GHz (S-band).
  • High output power: Delivers typically 40W of saturated output power.
  • High gain: Offers a gain of typically 28 dB.
  • High power-added efficiency (PAE): Achieves typically 55% PAE.
  • Input and output matched to 50 Ohms: Simplifies integration into RF systems.
  • Small size: Compact design for space-constrained applications.
  • Robust performance: Designed for reliable operation in harsh environments.

Benefits:

  • Improved system performance: High power and gain enhance signal strength and range.
  • Efficient power amplification: High PAE reduces power consumption and heat dissipation.
  • Simplified integration: Input and output matching eases system design.
  • Compact design: Allows for use in space-constrained applications.
  • Reliable operation: GaN technology ensures stable performance and longevity.

Technical Specifications:

The TGF2023-2-02 is typically packaged in a flange-mount package for efficient heat dissipation. It requires a drain voltage of typically 28V and a gate voltage for bias control. The device operates over a wide temperature range, typically from -40°C to +85°C. Its GaN-on-SiC construction provides excellent thermal conductivity, contributing to its high efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $81.4926 $81.4926
2+ $66.8657 $133.7314
3+ $64.7762 $194.3286
4+ $62.6866 $250.7464
5+ $60.5971 $302.9855
6+ $54.3284 $325.9704
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,600 pieces
Order Increment : 1 pcs
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