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Same model may have multiple batches, images only for reference.
TP65H015G5WS Transphorm
Same model may have multiple batches, images only for reference.

TP65H015G5WS

Part No TP65H015G5WS
Manufacturer Transforming Technologies, LLC
Catalog FETs - Single
Description 650 V 95 A GAN FET
Datasheet
TP65H015G5WS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202027-TP65H015G5WS
Manufacturer Transphorm
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series SuperGaN™
Package Tube
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Power Dissipation (Max) 266W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian TP65H015G5WS CAD Model

Description

The 1202027 is a N-Channel GaNFET (Gallium Nitride) transistor manufactured by Transphorm.

  • Series: SuperGaN™
  • Applications: high-power applications such as power supplies, inverters, and electric vehicle systems
  • Power Dissipation: 266W @ case temperature (Tc)
  • Operating Temperature Range: -55°C to 150°C
  • Package: tube
  • Mounting: through-hole mounting
  • Product Status: active

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Quantity Unit Price Ext. Price
1+ $52.1058 $52.1058
3+ $42.7535 $128.2605
4+ $41.4175 $165.6700
5+ $40.0814 $200.4070
7+ $38.7454 $271.2178
9+ $34.7372 $312.6348
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