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TP65H015G5WS Transphorm

Same model may have multiple batches, images only for reference.

TP65H015G5WS Transphorm

Same model may have multiple batches, images only for reference.

TP65H015G5WS

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Part No	TP65H015G5WS
Manufacturer	Transforming Technologies, LLC
Catalog	FETs - Single
Description	650 V 95 A GAN FET
Datasheet	TP65H015G5WS Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Win Source Part Number	WS1202027-TP65H015G5WS
Manufacturer	Transphorm
Category	Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series	SuperGaN™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Power Dissipation (Max)	266W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Ultra Librarian 3D Model	Ultra Librarian TP65H015G5WS CAD Model

Alternative Products

Description

The 1202027 is a N-Channel GaNFET (Gallium Nitride) transistor manufactured by Transphorm.

Series: SuperGaN™
Applications: high-power applications such as power supplies, inverters, and electric vehicle systems
Power Dissipation: 266W @ case temperature (Tc)
Operating Temperature Range: -55°C to 150°C
Package: tube
Mounting: through-hole mounting
Product Status: active

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$52.1058	$52.1058
3+	$42.7535	$128.2605
4+	$41.4175	$165.6700
5+	$40.0814	$200.4070
7+	$38.7454	$271.2178
9+	$34.7372	$312.6348

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