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Same model may have multiple batches, images only for reference.
U1GWJ49(TE12L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

U1GWJ49(TE12L,F)

Part No U1GWJ49(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 40V 1A PWMINI / Diode Schottky 40 V 1A Surface Mount PW-MINI
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Obsolete
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 550 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 500 µA @ 40 V
Mounting SMD (SMT)
Package / Case TO-243AA
Supplier Device Package PW-MINI
Operating Temperature - Junction -40°C ~ 125°C
Base Product Number U1GWJ49
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1,000
Win Source Part Number 1101763-U1GWJ49(TE12L,F)
Ultra Librarian 3D Model Ultra Librarian U1GWJ49(TE12L,F) CAD Model

Description

The Toshiba Semiconductor and Storage U1GWJ49 Schottky diode is a fast recovery diode with a maximum reverse voltage of 40V and an average rectified current of 1A.

  • Maximum Reverse Voltage: 40V
  • Average Rectified Current: 1A
  • Low Forward Voltage: 550mV @ 1A
  • Reverse Leakage Current: 500µA @ 40V
  • Package: TO-243AA
  • Supplied in: Tape and Reel
  • Operating Temperature Range: -40°C to 125°C

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