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Same model may have multiple batches, images only for reference.
TPC8109(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8109(TE12L,Q)

Part No TPC8109(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P-CH 30V 10A 8-SOP
Datasheet
TPC8109(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 2260pF @ 10V
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.173", 4.40mm Width)
Manufacturer Device Package 8-SOP (5.5x6.0)
Win Source Part Number 219784-TPC8109(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8109(TE12L,Q) CAD Model

Description

The Toshiba Semiconductor and Storage TPC8109(TE12L,Q) is a MOSFET transistor that is designed for use in a variety of applications, including power management, motor control, and lighting control.

  • Series: TPC8109 series
  • Maximum Drain-Source Voltage: 30V
  • FET Feature: P-channel, metal oxide
  • On-State Resistance: 20 mOhm
  • Package: 8-SOIC package
  • Mounting: SMD (SMT) technology
  • Gate-Source Voltage: 2V
  • Input Capacitance: 2260pF @ 10V
  • Ideal for: high-power applications
  • Operating Temperature: temperatures up to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
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