The TPC8056-HLQ is an N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-efficiency power management applications, particularly in DC-DC converters and load switching. It offers a combination of low on-resistance and fast switching speeds, contributing to improved system performance and reduced power losses.

Applications

• DC-DC converters
• Load switching
• Power management in portable devices
• Motor control
• Backlight inverters

Features

• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• Low input capacitance
• Small surface-mount package (SOP-8)
• RoHS compliant

Benefits

• Reduces power losses and increases efficiency in power conversion circuits.
• Enables high-frequency operation due to fast switching speed.
• Minimizes switching losses.
• Saves board space with its compact package size.
• Meets environmental standards for lead-free manufacturing.

Technical Specifications

The TPC8056-HLQ has a maximum drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 7A. The drain-source on-resistance (RDS(on)) is typically 14 mΩ at VGS = 10V. The gate threshold voltage (VGS(th)) is typically 1.8V. The input capacitance (Ciss) is typically 700 pF. The total gate charge (Qg) is typically 10 nC. The operating temperature range is from -55°C to +150°C. The SOP-8 package provides excellent thermal performance and is suitable for automated assembly processes. The low on-resistance and fast switching speed contribute to reduced power dissipation and improved overall system efficiency.

This power MOSFET is a reliable and efficient solution for various power management applications, providing high performance in a compact surface-mount package.