The TPC8002-H is an N-channel MOS field-effect transistor (MOSFET) from Toshiba Semiconductor and Storage, optimized for high-efficiency power switching applications. The "-H" suffix indicates that it is a halogen-free product, aligning with environmental regulations. This device is engineered for low on-resistance and fast switching, contributing to enhanced power efficiency and reduced heat generation.

Applications

• DC-DC converters
• Switching regulators
• Power management in portable devices
• Motor drivers
• Load switching

Features

• Low drain-source on-resistance (RDS(ON))
• High-speed switching capability
• Halogen-free construction
• Surface mount package
• Logic level gate drive

Benefits

• Improved energy efficiency due to reduced conduction losses
• Reduced heat dissipation
• Environmentally friendly
• Easy to integrate into compact designs
• Simplified gate drive circuitry

Detailed Specs

The TPC8002-H features a low RDS(ON), typically around 12 mΩ at a gate-source voltage (VGS) of 10V. This low on-resistance minimizes conduction losses and contributes to improved overall efficiency. The device is capable of handling a continuous drain current (ID) of approximately 15A, making it suitable for moderate to high power applications. The gate threshold voltage (Vth) is typically around 2V, making it compatible with logic-level drive voltages, which simplifies the gate drive circuitry. The maximum drain-source voltage (VDS) is 30V. Its fast switching speed minimizes switching losses, further contributing to enhanced efficiency, particularly in high-frequency applications. The TPC8002-H is available in a small surface mount package, allowing for efficient use of board space. The halogen-free construction ensures compliance with environmental regulations. This MOSFET is an excellent choice for power management applications where efficiency, compactness, and environmental compliance are critical requirements. It is designed to provide robust and reliable performance under demanding operating conditions.