The TLP268J(TPL is a small outline transistor photocoupler from Toshiba Semiconductor and Storage. It consists of a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor. This photocoupler is designed for high-density mounting applications and offers reinforced insulation.

Applications

• Factory automation
• Programmable logic controllers (PLCs)
• Inverter control
• Switching power supplies
• I/O interface boards

Features

• High isolation voltage: 5000 Vrms (minimum)
• Collector-emitter voltage: 80 V (minimum)
• Current transfer ratio (CTR): 50% to 400%
• Operating temperature: -55°C to 110°C
• Small outline package (SOP)
• Reinforced insulation

Benefits

• Provides electrical isolation between input and output circuits, protecting sensitive control circuits from high voltage surges and noise.
• High CTR allows for efficient signal transfer with minimal current input.
• Wide operating temperature range ensures reliable operation in harsh industrial environments.
• Small outline package saves valuable board space.
• Reinforced insulation provides enhanced safety and reliability.

Additional Details

The TLP268J(TPL features a high isolation voltage of 5000 Vrms, making it suitable for applications requiring stringent safety standards. The collector-emitter voltage is rated at 80 V, providing ample headroom for various circuit designs. The current transfer ratio (CTR) ranges from 50% to 400%, allowing for flexible signal amplification. This photocoupler is available in a small outline package (SOP), which is ideal for high-density mounting. The device’s operating temperature range spans from -55°C to 110°C.