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TK55A10J1

Part No TK55A10J1
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1008
Reference case TO-220F
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 750090-TK55A10J1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK55A10J1 CAD Model

Description

The TK55A10J1 is an N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds.

Applications

  • Switching power supplies
  • DC-DC converters
  • Motor control circuits
  • Lighting control
  • Load switches

Features

  • Voltage Rating: 100V, making it suitable for various power applications.
  • On-Resistance (RDS(on)): Low on-resistance minimizes power loss and improves efficiency.
  • Gate Charge (Qg): Low gate charge enables fast switching speeds.
  • Avalanche Capability: High avalanche ruggedness provides robust performance under transient conditions.
  • Operating Temperature Range: Wide operating temperature range for reliability in various environments.
  • Surface Mount Package: Designed for easy and efficient assembly onto printed circuit boards.

Benefits

  • High Efficiency: Low on-resistance reduces power dissipation, resulting in higher overall efficiency.
  • Fast Switching: Low gate charge enables fast switching speeds, improving performance in high-frequency applications.
  • Reliable Operation: High avalanche ruggedness ensures robust performance under transient conditions.
  • Compact Design: Surface mount package allows for high-density circuit designs.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation, improving thermal management.

Additional Details

The TK55A10J1 MOSFET utilizes advanced trench MOSFET technology to achieve low on-resistance and fast switching speeds. It features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) that varies depending on the case temperature. The gate-source voltage (VGS) is typically ±20V. The device is designed for surface mount assembly, and the specific package dimensions can be found in the Toshiba datasheet for this part number. The MOSFET's low on-resistance minimizes conduction losses, making it suitable for high-efficiency power converters. Its fast switching capability reduces switching losses, further improving overall system efficiency. It is RoHS compliant and designed for long-term reliability in various electronic applications. The advanced design and manufacturing processes ensure consistent performance and robust operation across a wide range of operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,550 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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