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TK4P60DB(T6RSS-Q)

Part No TK4P60DB(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 600V 3.7A DPAK-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 3.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2Ohm at 1.9A, 10V
Vgs(th) (Maximum) at Id 4.4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 540pF at 25V
Power Dissipation (Maximum) 80W (Tc)
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813180-TK4P60DB(T6RSS-Q)
Ultra Librarian 3D Model Ultra Librarian TK4P60DB(T6RSS-Q) CAD Model

Description

The Toshiba Semiconductor and Storage TK4P60DB(T6RSS-Q) is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage: 600V
  • Power Dissipation: 80W (Tc)
  • Maximum Rds On: 2Ohm @ 1.9A, 10V
  • Gate Charge: 11nC @ 10V
  • Input Capacitance: 540pF @ 25V
  • Continuous Drain Current: 3.7A @ 25°C
  • Vgs(th): 4.4V @ 1mA
  • Maximum Vgs: ±30V
  • Package: D-Pak
  • Mounting Style: SMD
  • Operating Temperature Range: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3172 $58.6820
445+ $0.2603 $115.8335
690+ $0.2522 $174.0180
950+ $0.2441 $231.8950
1,225+ $0.2359 $288.9775
1,640+ $0.2115 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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