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TK4A80E,S4X

Part No TK4A80E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Souring
Description MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD=35WF=1MHZ
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1469431-TK4A80E,S4X
Manufacturer Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C
Grade -
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Ultra Librarian 3D Model Ultra Librarian TK4A80E,S4X CAD Model

Description

The TK4A80E,S4X is a high-efficiency, lead-free Power MOSFET produced by Toshiba, designed specifically for energy-sensitive applications. Housed in a TO-220SIS package, this MOSFET showcases a power dissipation (PD) capacity of 35 Watts and operates at a frequency of 1 MHz. It is geared towards providing reliable performance in power regulation frameworks, with a focus on minimizing environmental impact through lead-free components. The TK4A80E,S4X is characterized by its strong endurance and capability to work under extensive thermal conditions without compromising performance. Its application range includes renewable energy systems, smart grid technology, and high-efficiency power supplies, making it a go-to choice for green and sustainable technology solutions.

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