The Toshiba TK17A65W,S5X(M is a 650V N-channel power MOSFET designed for high-efficiency power switching applications. It utilizes Toshiba's advanced trench MOSFET technology to achieve low on-resistance (RDS(on)) and gate charge, resulting in reduced switching losses and improved overall system efficiency. The device is suitable for use in power supplies, motor drives, and other power conversion circuits.

Applications

• Switching Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Motor Drives
• Uninterruptible Power Supplies (UPS)
• Solar Inverters

Features

• 650V Drain-Source Voltage (VDSS)
• Low On-Resistance (RDS(on)): Reduces conduction losses.
• Low Gate Charge (Qg): Minimizes switching losses.
• Fast Switching Speed: Enables high-frequency operation.
• Avalanche Energy Rated: Provides ruggedness and reliability.

Benefits

• High Efficiency: Low RDS(on) and Qg minimize power losses, improving overall system efficiency.
• Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Increased Power Density: Enables smaller and more compact power supply designs.
• Improved Reliability: Avalanche energy rating enhances device ruggedness.
• Simplified Design: Easy to drive and implement in various power conversion topologies.

Specifications: The TK17A65W has a drain-source voltage (VDSS) of 650V, a continuous drain current (ID) of 17A, and a pulsed drain current (IDM) of 51A. The on-resistance (RDS(on)) is typically 0.29 ohms at VGS = 10V. It's available in a TO-247 package. The gate charge (Qg) is typically 21 nC. This MOSFET also features an integrated gate resistor to further enhance switching performance. The device is RoHS compliant.