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TK100J10NE

Part No TK100J10NE
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217120-TK100J10NE
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK100J10NE CAD Model

Description

The TK100J10NE is an N-channel power MOSFET produced by Toshiba Semiconductor and Storage. It's designed for efficient power conversion and control in various applications. Key features include low on-resistance, minimizing conduction losses, and fast switching speed, reducing switching losses. These characteristics lead to improved overall system efficiency. The MOSFET is typically available in a through-hole package, suitable for applications where reliable mechanical mounting and effective heat dissipation are important.

Applications:

  • Switching Power Supplies
  • Motor Drives
  • DC-DC Converters
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Power Conversion Circuits

Features:

  • N-channel MOSFET
  • Low Drain-Source On-Resistance (RDS(on)): Minimizes conduction losses for higher efficiency.
  • High Drain Current (ID): Allows for handling substantial power loads.
  • Fast Switching Speed: Reduces switching losses at higher frequencies.
  • Through-Hole Package: Offers robust mounting and facilitates heat dissipation.
  • Avalanche Energy Rating: Enhances ruggedness and reliability.

Benefits:

  • Increased Efficiency: Low on-resistance and fast switching minimize power losses.
  • Improved Thermal Performance: Through-hole package allows for efficient heat dissipation.
  • Higher Power Density: Handles significant power in a compact form factor.
  • Enhanced Reliability: Avalanche energy rating provides robustness against voltage transients.
  • Simplified Design: Easy to implement and integrate into power electronic circuits.

Additional Details:

The TK100J10NE typically has a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating specific to its operating conditions, as detailed in the datasheet. The gate-source voltage (VGS) rating is usually ±20V. This MOSFET generally uses advanced trench technology, optimizing on-resistance and switching characteristics. Proper gate drive and thermal management are essential for optimal performance and longevity. Designers should always consult the official datasheet for precise electrical characteristics and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5174 $60.6914
26+ $4.5276 $117.7176
40+ $4.3855 $175.4200
55+ $4.2446 $233.4530
71+ $4.1026 $291.2846
95+ $3.6787 $349.4765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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