The Toshiba Semiconductor and Storage TK100E10N1,S1X is a MOSFET transistor with an N-channel polarity. It has a Vds - Drain-Source Breakdown Voltage of 100V and an Id - Continuous Drain Current of 100A. The Rds On (Maximum) @ Id, Vgs is 3.4mOhm @ 50A, 10V. The gate source voltage(th) (Maximum) @ Id is 4V @ 1mA and the gate charge (Qg) (Maximum) @ Vgs is 140nC @ 10V. The gate source voltage (Maximum) is ±20V and the input capacitance (Ciss) (Maximum) @ Vds is 8800pF @ 50V. The product is available in a TO-220 package and has a drive voltage (Max Rds On, Min Rds On) of 10V. It can operate in a temperature range of 150°C and has a power dissipation (Maximum) of 255W. The estimated EOL date for this product is 2026 and it has a high popularity with a balance supply and demand status.

• Component Type: MOSFET Transistor
• Polarity: N-Channel
• Vds - Drain-Source Breakdown Voltage: 100V
• Id - Continuous Drain Current: 100A
• Rds On (Maximum) @ Id, Vgs: 3.4mOhm @ 50A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V
• Gate Source Voltage (Maximum): ±20V
• Input Capacitance (Ciss) (Maximum) @ Vds: 8800pF @ 50V
• Package: TO-220
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Operating Temperature: 150°C
• Power Dissipation (Maximum): 255W
• Estimated EOL Date: 2026