The TH58TEG8DDJBA8C is a 64GB NAND flash memory device manufactured by Toshiba Semiconductor and Storage. This component uses a multi-level cell (MLC) architecture, allowing for a higher density of data storage compared to single-level cell (SLC) devices. It's designed for applications where storage capacity is prioritized over ultimate endurance, offering a balance between cost and performance.

Applications

• Consumer SSDs (Solid State Drives)
• Mobile devices (smartphones, tablets)
• Digital cameras and camcorders
• USB flash drives
• Embedded storage in various consumer electronics

Features

• 64GB storage capacity
• Multi-level cell (MLC) NAND flash technology
• High storage density
• Compact package size
• Operating voltage: typically 3.3V or 1.8V (depending on specific configuration)

Benefits

• Cost-effective storage solution
• Large storage capacity in a small form factor
• Suitable for storing large files and applications
• Improved performance compared to traditional hard disk drives (HDDs)
• Enhanced durability and shock resistance compared to HDDs

Additional Details

The TH58TEG8DDJBA8C utilizes a specific NAND flash controller interface for managing data access and error correction. Its performance is characterized by read and write speeds, which vary depending on the controller implementation and the overall system architecture. The device's operating voltage and power consumption are critical parameters for mobile applications, impacting battery life. The MLC technology offers a good balance between storage density and endurance, making it suitable for various consumer electronics applications. The specific package type and pinout are essential for PCB design and integration. Error correction codes (ECC) are implemented to maintain data integrity and reliability over the lifespan of the device. Detailed datasheet provides comprehensive specifications on timing, electrical characteristics, and reliability parameters.