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Same model may have multiple batches, images only for reference.
TH58BVG2S3HTA00 Real Image
Same model may have multiple batches, images only for reference.

TH58BVG2S3HTA00

Part No TH58BVG2S3HTA00
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 4GBIT 25NS 48TSOP
Datasheet
TH58BVG2S3HTA00 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Status Active
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 4Gb (512M x 8)
Access Time 25ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating 0°C to 70°C (TA)
Mounting SMD (SMT)
Case / Package 48-TSOP I
Win Source Part Number 212809-TH58BVG2S3HTA00
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TH58BVG2S3HTA00 CAD Model

Description

The Toshiba Semiconductor and Storage TH58BVG2S3HTA00 is a 4Gb (512M x 8) EEPROM-NAND memory IC that has a 25ns access time.

  • Features: High speed data transfer and low power consumption.
  • Package: 48-TSOP I package
  • Supply Voltage: 2.7 V to 3.6 V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2647 $62.6470
23+ $5.1398 $118.2154
35+ $4.9792 $174.2720
48+ $4.8187 $231.2976
62+ $4.6581 $288.8022
83+ $4.1765 $346.6495
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Availability: 6,000 pieces
MOQ: 10 pcs
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