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TC58CVG1S3HRAIG Toshiba Semiconductor and Storage TC58CVG1S3HRAIG real image15574 TC58CVG1S3HRAIG Real Image1 TC58CVG1S3HRAIG Real Image2
Same model may have multiple batches, images only for reference.
TC58CVG1S3HRAIG Toshiba Semiconductor and Storage TC58CVG1S3HRAIG real image15574 TC58CVG1S3HRAIG Real Image1 TC58CVG1S3HRAIG Real Image2
TC58CVG1S3HRAIG Toshiba Semiconductor and Storage TC58CVG1S3HRAIG real image15574 TC58CVG1S3HRAIG Real Image1 TC58CVG1S3HRAIG Real Image2
Same model may have multiple batches, images only for reference.

TC58CVG1S3HRAIG

Part No TC58CVG1S3HRAIG
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Description 2GB SERIAL NAND 24NM WSON 3.3V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Memory Interface SPI
Clock Frequency 104MHz
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (6x8)
Manufacturer Pack Quantity 480
MSL Level 3 (168 Hours)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806391-TC58CVG1S3HRAIG
Ultra Librarian 3D Model Ultra Librarian TC58CVG1S3HRAIG CAD Model

Description

The TC58CVG1S3HRAIG is a 2Gb (256M x 8) Non-Volatile FLASH-NAND memory device that operates with a voltage range of 2.7V to 3.6V.

  • Supply and Demand Status: Balanced
  • Popularity: Medium
  • Manufacturer: Toshiba Semiconductor and Storage
  • Package: 8-WSON (6x8)
  • Clock Frequency: 104MHz
  • Operating Temperature: -40°C to 85°C

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85+ $2.9600 $251.6000
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