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TC58BYG0S3HBAI6 Real Image1 TC58BYG0S3HBAI6 Real Image2
Same model may have multiple batches, images only for reference.
TC58BYG0S3HBAI6 Real Image1 TC58BYG0S3HBAI6 Real Image2
TC58BYG0S3HBAI6 Real Image1 TC58BYG0S3HBAI6 Real Image2
Same model may have multiple batches, images only for reference.

TC58BYG0S3HBAI6

Part No TC58BYG0S3HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description IC FLASH 1G PARALLEL 67VFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 802972-TC58BYG0S3HBAI6
Ultra Librarian 3D Model Ultra Librarian TC58BYG0S3HBAI6 CAD Model

Description

The Toshiba TC58BYG0S3HBAI6 flash memory from Toshiba is a 1Gb (128M x 8) NAND flash memory.

  • Access Time: 25ns
  • Mounting: SMD
  • Temperature Range: -40°C to 85°C
  • Packaging: Tray
  • Manufacturer Pack Quantity: 338
  • MSL Level: 3 (168 Hours)
  • Supply Voltage: 1.7V ~ 1.95V
  • Memory Interface: Parallel

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