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Same model may have multiple batches, images only for reference.
TC58BVG0S3HBAI4JDH Real Image
Same model may have multiple batches, images only for reference.

TC58BVG0S3HBAI4JDH

Part No TC58BVG0S3HBAI4JDH
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 1GBIT 25NS 63FBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Status Active
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Access Time 25ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package 63-TFBGA (9x11)
Win Source Part Number 212624-TC58BVG0S3HBAI4JDH
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TC58BVG0S3HBAI4JDH CAD Model

Description

The Toshiba Semiconductor and Storage TC58BVG0S3HBAI4JDH is a 1Gb (128M x 8) EEPROM-NAND memory chip with a fast access time of 25ns.

  • Supply Voltage: 2.7V to 3.6V
  • Package: 63-TFBGA (9x11) case
  • Application: commonly used in various electronic devices that require non-volatile memory storage
  • Market Status: highly popular and widely available component in the market

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