The TC55V1664BJ-12 is a high-speed, low-power Static Random Access Memory (SRAM) from Toshiba Semiconductor and Storage. It is designed for applications requiring fast data access and low power consumption, making it suitable for various embedded systems and portable devices.

Applications

• Cache memory for microprocessors
• Buffer memory in data acquisition systems
• Memory for embedded systems
• High-speed data storage
• Industrial control systems

Features

• High-speed access time: 12ns
• Low power consumption
• Operating voltage: 3.3V
• Organization: 16,384 words x 64 bits
• Fully static operation: no clock or refresh required
• Three-state outputs
• TTL compatible inputs and outputs

Benefits

• Increased system performance due to rapid data access.
• Extended battery life in portable applications due to low power consumption.
• Simplified system design with fully static operation, eliminating complex refresh circuitry.
• Easy interface with standard TTL logic.
• High reliability and data integrity.

Technical Specifications

The TC55V1664BJ-12 operates on a 3.3V power supply. It boasts an access time of 12ns, facilitating quick data retrieval. Organized as 16,384 words by 64 bits, this SRAM is ideal for applications demanding high bandwidth. Its fully static operation removes the need for external clocks or refresh cycles, streamlining system design and reducing power consumption. The three-state outputs enable flexible memory expansion and simplified interfacing with other system components. The operating temperature range is typically 0°C to +70°C.