The TC55NEM216AFTN-70 is a low power CMOS static RAM (SRAM) from Toshiba. It's designed for applications where data retention during periods of low power or power loss is crucial, and where fast access times are required.

Applications

• Portable devices (e.g., handheld computers, PDAs)
• Battery-backed memory systems
• Cache memory
• Data loggers
• Industrial control equipment

Features

• Capacity: 2Mbit (128K x 16-bit)
• Organization: 128K x 16 bits
• Access Time: 70ns (nanoseconds), indicating a fast read/write cycle
• Low Power Consumption: Designed for minimal power usage, especially in standby mode
• Data Retention: Retains data even with low voltage or power loss
• CMOS Technology: Utilizes CMOS technology for high performance and low power
• Wide Operating Voltage Range: Typically operates from 3V to 5.5V
• Package: TSOP (Thin Small Outline Package)

Benefits

• Non-Volatile Data Storage: Retains data without constant power, making it suitable for critical data storage.
• Fast Access Time: Enables quick retrieval and storage of data, improving system performance.
• Low Power Consumption: Extends battery life in portable devices and reduces overall power usage.
• Compact Size: The TSOP package allows for high-density board designs.
• Wide Operating Voltage: Provides flexibility in system design and power supply options.

Additional Details

The TC55NEM216AFTN-70 is a reliable and efficient memory solution for applications requiring non-volatile data storage and fast access times. The 70ns access time is a key parameter, specifying the maximum time it takes for the SRAM to provide valid data after an address is applied. Always consult the Toshiba datasheet for detailed specifications, timing diagrams, and operating conditions.

This SRAM requires careful handling to avoid electrostatic discharge (ESD) damage. It is recommended to follow standard ESD precautions when handling and installing this component. Design engineers should consult the datasheet for detailed information on power supply requirements, signal timing, and thermal considerations.