The TC551664BJ is a high-speed, low-power CMOS static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. It is organized as 65,536 words by 16 bits, providing a total memory capacity of 1 Mbit (1,048,576 bits). This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for portable devices and high-performance computing systems.

Applications

• Embedded systems requiring fast data access.
• Cache memory in microprocessors.
• Digital signal processing (DSP) systems.
• Portable devices such as mobile phones and PDAs.
• Instrumentation and control equipment.

Features

• High-speed access times: typically in the range of 10-20 ns.
• Low power consumption due to CMOS technology.
• Organized as 65,536 words × 16 bits.
• Single 5V power supply.
• TTL-compatible inputs and outputs.
• Available in a variety of package options, including SOP and TSOP.

Benefits

• Fast read and write operations enhance system performance.
• Low power consumption extends battery life in portable devices.
• Easy integration into existing systems due to TTL compatibility.
• High reliability and data retention.

Additional Details

The TC551664BJ operates on a single 5V power supply and features TTL-compatible inputs and outputs for seamless integration with other digital components. Its high-speed access times and low power consumption make it an ideal choice for demanding applications. The device is available in various package options to accommodate different board layouts and space constraints. The typical operating temperature range is from -40°C to +85°C, ensuring reliable performance in a wide range of environments. The SRAM also features a standby mode to further reduce power consumption when not actively being accessed. The specific access time will vary based on the exact part number and speed grade. Refer to the Toshiba datasheet for the precise timing characteristics.