The SSM6P39TU,LF is a MOSFET array from Toshiba Semiconductor and Storage.

• It is designed for discrete semiconductor applications, specifically for FET and MOSFET arrays.
• The SSM6P39TU,LF features a logic level gate and a 1.8V drive, making it suitable for low voltage applications.
• Drain-to-Source Voltage (Vdss): 20V
• Continuous Drain Current (Id) @ 25°C: 1.5A @ 25°C
• Maximum On-Resistance (Rds On) @ 1A and 4V gate-source voltage: 213mOhm @ 1A and 4V gate-source voltage
• Maximum Power: 500mW
• The SSM6P39TU,LF is configured as a dual P-channel MOSFET and is mounted in a surface mount 6-SMD package with flat leads.
• Gate Charge (Qg) @ 4V gate-source voltage: 6.4nC @ 4V gate-source voltage
• Input Capacitance (Ciss) @ 10V drain-source voltage: 250pF @ 10V drain-source voltage
• Operating Temperature Range: up to 150°C
• It is an active product and is classified as EAR99 under export control regulations.
• The SSM6P39TU,LF is a reliable and high-performance solution for MOSFET array applications.