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SSM6N44FE,LM

Part No SSM6N44FE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 0.1A ES6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 8.5pF @ 3V
Power - Max 150mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number SSM6N44
Standard Package 4,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 838855-SSM6N44FE,LM
Ultra Librarian 3D Model Ultra Librarian SSM6N44FE,LM CAD Model

Description

The 838855-SSM6N44FE,LM is a dual N-channel MOSFET array in a SOT-563, SOT-666 package.

  • Type: Logic level gate MOSFET
  • Application: Designed for use in discrete semiconductor products.
  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100mA @ 25°C
  • Maximum On-Resistance (Rds On): 4Ω @ 10mA and gate-source voltage of 4V
  • Gate Threshold Voltage: 1.5V @ 100μA
  • Maximum Power Rating: 150mW
  • Maximum Temperature: Up to 150°C
  • Mounting Type: Surface mountable
  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Series: Active
  • Moisture Sensitivity Level: 1 (unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
645+ $0.0777 $50.1165
1,375+ $0.0728 $100.1000
2,135+ $0.0704 $150.3040
3,060+ $0.0654 $200.1240
3,970+ $0.0630 $250.1100
4,960+ $0.0605 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180,000 pieces
MOQ: 645 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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