The SSM6N36TU.LF is a small signal N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for low voltage switching applications, offering low on-resistance and fast switching speeds. It is often used in portable devices and other applications where space and power efficiency are critical.

Applications:

• Load switching
• DC-DC conversion
• Level shifting
• Analog switches
• Portable devices

Features:

• N-channel MOSFET
• Low on-resistance (RDS(on))
• High-speed switching
• Small surface mount package
• Low gate charge
• Lead-free package

Benefits:

• Improved energy efficiency due to low on-resistance
• Reduced switching losses due to high-speed switching
• Reduced board space due to small size
• Simplified gate drive due to low gate charge
• Environmentally friendly due to lead-free construction

Additional Details:

The SSM6N36TU.LF typically has a drain-source voltage (VDS) rating of 20V and a continuous drain current (ID) rating around 2A. Its on-resistance (RDS(on)) is typically below 100 mΩ at a gate-source voltage (VGS) of 4.5V. The gate threshold voltage is typically between 0.4V and 1.0V. The device is packaged in a small surface-mount package. For detailed specifications, including the exact RDS(on), gate charge, and thermal resistance, please refer to the Toshiba Semiconductor and Storage datasheet for the SSM6N36TU.LF.