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SSM3K03TE TE85L,F

Part No SSM3K03TE TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192936-SSM3K03TE TE85L,F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K03TE TE85L,F CAD Model

Description

The SSM3K03TE TE85L,F is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage. The 'TE85L' suffix indicates a specific tape and reel packaging for automated assembly, and ',F' likely indicates a specific manufacturing or lot characteristic. It is designed for high-speed switching applications and load switching. This surface-mount device is available in a small, low-profile package, making it suitable for space-constrained applications.

Applications

  • High-Speed Switching
  • Load Switching
  • DC-DC converters
  • Power management circuits in portable devices
  • Motor control circuits

Features

  • N-Channel MOSFET
  • Low on-resistance (RDS(ON))
  • Low gate charge
  • Small surface-mount package (SOT-23)
  • High-speed switching capability
  • Lead-free and RoHS compliant
  • TE85L Tape and Reel Packaging for automated assembly

Benefits

  • Improved efficiency: The low on-resistance minimizes power loss during switching, leading to improved energy efficiency in the application.
  • Reduced board space: The small SOT-23 package allows for a compact design, saving valuable board space.
  • High-speed switching: Enables faster switching speeds, which can improve the performance of the application.
  • Simplified design: The device is easy to use and requires minimal external components.
  • Environmentally friendly: Lead-free and RoHS compliant, meeting environmental regulations.
  • Optimized for automated assembly: TE85L packaging ensures efficient pick-and-place during manufacturing.

Technical Specifications

The SSM3K03TE TE85L,F typically features a drain-source voltage (VDSS) of 30V, a gate-source voltage (VGSS) of ±20V, and a continuous drain current (ID) of around 1.5A. The on-resistance (RDS(ON)) is typically less than 0.3 ohms at VGS = 10V. It is designed to operate over a temperature range of -55°C to +150°C. The specific values may vary slightly; refer to the official datasheet for precise specifications.

This MOSFET provides a balance of performance, size, and cost, making it a popular choice for various switching and power management applications, especially in portable and battery-powered devices where efficiency and space are critical. The TE85L packaging makes it suitable for high-volume manufacturing environments.

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