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RN4982FE(T5LCANO,F

Part No RN4982FE(T5LCANO,F
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 07+
Reference case SOT23-6
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 756105-RN4982FE(T5LCANO,F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4982FE(T5LCANO,F CAD Model

Description

The RN4982FE(T5LCANO,F is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for various switching and amplification applications, particularly in portable devices and power management circuits where efficient power control is essential. P-channel MOSFETs are typically used as high-side switches because they are turned on by a low voltage applied to the gate relative to the source.

Applications:

  • Load Switching: Used for turning on and off loads in battery-powered devices.
  • Power Management: Employed in DC-DC converters and voltage regulators.
  • Motor Control: Used in low-power motor control circuits.
  • Portable Devices: Integrated into smartphones, tablets, and other portable electronics.
  • LED Lighting: Used in LED driver circuits for controlling LED brightness.

Features:

  • Low On-Resistance: Minimizes power loss during conduction, improving efficiency.
  • Low Gate Charge: Reduces switching losses and improves switching speed.
  • Small Package Size: Allows for compact designs and easy integration into electronic circuits.
  • Logic Level Gate Drive: Can be directly driven by logic-level signals, simplifying circuit design.
  • RoHS Compliant: Meets environmental standards for hazardous substance restriction.

Benefits:

  • High Efficiency: Low on-resistance reduces power dissipation and improves energy efficiency.
  • Fast Switching Speed: Low gate charge enables fast switching, improving circuit performance.
  • Compact Design: Small package size allows for integration into space-constrained applications.
  • Simplified Circuitry: Logic level gate drive simplifies the driving circuitry.
  • Enhanced Battery Life: Efficient power control helps to extend battery life in portable devices.

Technical Specifications:

The RN4982FE(T5LCANO,F typically features a drain-source voltage (VDS) rating of -30V (P-channel), and a continuous drain current (ID) rating that varies based on the operating temperature. The on-resistance (RDS(on)) is typically very low, minimizing power loss. The gate-source threshold voltage (VGS(th)) is typically between -1V and -3V, allowing it to be driven by logic-level signals. The operating temperature range is usually from -55°C to +150°C. The package is usually a small surface-mount package such as an SOT-23 or similar. For detailed specifications, refer to the Toshiba datasheet, which includes information on pulsed drain current, gate charge, input capacitance, output capacitance, and thermal resistance. The datasheet also provides information on safe operating area and derating curves. The T5LCANO,F suffix usually refers to the specific packaging and tape options.

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