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Same model may have multiple batches, images only for reference.
RN2906FE,LF(CT
Same model may have multiple batches, images only for reference.

RN2906FE,LF(CT

Part No RN2906FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 100mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN2906
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names RN2906FELF(CTTR,RN2906FE,LF(CB,RN2906FELF(CTCT,RN2906FELF(CTDKR
Standard Package 4,000
Win Source Part Number 974587-RN2906FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN2906FE,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN2906FE,LF(CT is a bipolar transistor array that is pre-biased with a power of 100mW.

  • Power: 100mW
  • Voltage: 50V
  • Current (Ic) (Max): 100mA
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Vce saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
  • Current of Collector Cutoff: 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Frequency of Transition: 200MHz
  • Standard Package: 4,000
  • Mounting: Surface Mountable

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