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Same model may have multiple batches, images only for reference.
RN2702TE85LF Real Image
Same model may have multiple batches, images only for reference.

RN2702TE85LF

Part No RN2702TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W USV
Datasheet
RN2702TE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package USV
Win Source Part Number 121753-RN2702TE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2702TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage RN2702TE85LF is a dual PNP pre-biased transistor in a USV package.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 50 @ 10mA and 5V
  • Maximum Power Dissipation: 200mW
  • Collector Cut-off Current: 500nA
  • Designed for: Discrete semiconductor products
  • Status: Active
  • Popularity: Medium

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