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Same model may have multiple batches, images only for reference.
PUMD2/DG/B4X Real Image
Same model may have multiple batches, images only for reference.

PUMD2/DG/B4X

Part No PUMD2/DG/B4X
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 300mW Surface Mount 6-TSSOP
Datasheet
PUMD2/DG/B4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA
Frequency - Transition 230MHz, 180MHz
Power - Max 300mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMD2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 934069964115
Standard Package 3,000
Win Source Part Number 1142562-PUMD2/DG/B4X
Ultra Librarian 3D Model Ultra Librarian PUMD2/DG/B4X CAD Model

Description

The PUMD2/DG/B4X is a pre-biased dual NPN and PNP transistor array from Nexperia USA Inc.

  • Package: 6-TSSOP, SC-88, SOT-363
  • Mounting: Surface-Mount Technology
  • Maximum Power: 300mW
  • Maximum Voltage Collector Emitter Breakdown: 50V
  • Maximum Current Collector: 100mA
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Application: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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