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Same model may have multiple batches, images only for reference.
RN2110MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2110MFV,L3F

Part No RN2110MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Sample
Rohs State rohs
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2110
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2110MFVL3F
Standard Package 8,000
Win Source Part Number 1088726-RN2110MFV,L3F
Ultra Librarian 3D Model Ultra Librarian RN2110MFV,L3F CAD Model

Description

This electronic component is a pre-biased PNP transistor manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 1088726-RN2110MFV,L3F
  • Power-Max: 150mW
  • Voltage for Collector Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ 250µA and 5mA
  • DC Current Gain: 120 @ 1mA and 5V

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