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RN1211

Part No RN1211
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (Q - R)
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 296947-RN1211
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1211 CAD Model

Description

The RN1211 is a bipolar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in various electronic circuits, particularly in amplification and switching applications. This transistor offers reliable performance and is commonly used in both consumer and industrial electronics.

Applications

  • Amplification circuits
  • Switching circuits
  • Voltage regulation
  • Current amplification
  • Signal processing

Features

  • High collector current capability
  • Low saturation voltage
  • High fT (transition frequency)
  • Excellent hFE linearity
  • Surface Mount Device (SMD) package

Benefits

  • Provides efficient amplification and switching
  • Enhances circuit performance due to its high fT
  • Ensures stable operation with excellent hFE linearity
  • Simplifies circuit design due to its SMD package
  • Offers reliable performance in various environmental conditions

Additional Details

The RN1211 is housed in a small surface-mount package, which makes it suitable for high-density circuit board designs. Its electrical characteristics are optimized for low-voltage and low-current operations. The transistor's datasheet provides detailed specifications, including maximum ratings, thermal characteristics, and electrical characteristics. This information is crucial for proper application and design considerations.

The transistor's high transition frequency (fT) allows it to operate efficiently at higher frequencies, making it suitable for applications requiring fast switching speeds or high-frequency amplification. Its low saturation voltage minimizes power dissipation, which is essential in energy-efficient designs. The excellent hFE linearity ensures that the amplification remains consistent over a wide range of collector currents.

When using the RN1211, it is important to adhere to the recommended operating conditions specified in the datasheet to ensure reliable and stable performance. Proper heat sinking may be required in applications where the transistor dissipates significant power. Additionally, appropriate biasing techniques should be employed to optimize the transistor's performance in specific circuit configurations.

Toshiba Semiconductor and Storage is a reputable manufacturer known for producing high-quality semiconductor devices. The RN1211 reflects Toshiba's commitment to delivering reliable and high-performance transistors for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.6976 $62.7904
9+ $12.8806 $115.9254
14+ $12.4775 $174.6850
20+ $12.0755 $241.5100
25+ $11.6724 $291.8100
34+ $10.4655 $355.8270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,270 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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