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Same model may have multiple batches, images only for reference.
RN1117(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1117(T5L,F,T)

Part No RN1117(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
RN1117(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 109236-RN1117(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1117(T5L,F,T) CAD Model

Description

This discrete semiconductor product is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 109236-RN1117(T5L,F,T).

  • Packaging: Reel
  • Mounting: SMD (SMT) technology
  • Transition Frequency: 250MHz
  • Transistor Type: NPN - Pre-Biased
  • Base Resistor (R1): 10k ohms
  • Emitter Base Resistor (R2): 4.7k ohms
  • Case/Package: SSM
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Popularity: Medium
  • Fake Product Threat: 30%
  • Supply and Demand Status: Balanced

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